JPH0350985B2 - - Google Patents
Info
- Publication number
- JPH0350985B2 JPH0350985B2 JP59016466A JP1646684A JPH0350985B2 JP H0350985 B2 JPH0350985 B2 JP H0350985B2 JP 59016466 A JP59016466 A JP 59016466A JP 1646684 A JP1646684 A JP 1646684A JP H0350985 B2 JPH0350985 B2 JP H0350985B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- gate
- sensitive film
- oxide
- sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 15
- 229910000457 iridium oxide Inorganic materials 0.000 claims description 15
- SJLOMQIUPFZJAN-UHFFFAOYSA-N oxorhodium Chemical compound [Rh]=O SJLOMQIUPFZJAN-UHFFFAOYSA-N 0.000 claims description 10
- 229910003450 rhodium oxide Inorganic materials 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 description 42
- 239000010408 film Substances 0.000 description 37
- 239000000758 substrate Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000012528 membrane Substances 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- -1 Si 3 N 4 Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002504 iridium compounds Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59016466A JPS60158348A (ja) | 1984-01-28 | 1984-01-28 | Ｉｓｆｅｔセンサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59016466A JPS60158348A (ja) | 1984-01-28 | 1984-01-28 | Ｉｓｆｅｔセンサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60158348A JPS60158348A (ja) | 1985-08-19 |
| JPH0350985B2 true JPH0350985B2 (en]) | 1991-08-05 |
Family
ID=11917028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59016466A Granted JPS60158348A (ja) | 1984-01-28 | 1984-01-28 | Ｉｓｆｅｔセンサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60158348A (en]) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62132160A (ja) * | 1985-12-04 | 1987-06-15 | Terumo Corp | 分離ゲ−ト型ｉｓｆｅｔを用いたバイオセンサ− |
| JPS62185160A (ja) * | 1986-02-10 | 1987-08-13 | Terumo Corp | バイオセンサ− |
| JPH0713611B2 (ja) * | 1987-02-25 | 1995-02-15 | 帝人株式会社 | 免疫センサ及び免疫検出方法 |
-
1984
- 1984-01-28 JP JP59016466A patent/JPS60158348A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60158348A (ja) | 1985-08-19 |
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